The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Mar. 16, 2011
Yen-cheng HU, New Taipei, TW;
Cheng-chang Kuo, Taichung, TW;
Jun-wei Chen, Kaohsiung, TW;
Hsin-feng LI, Tainan, TW;
Jen-chieh Chen, Miaoli County, TW;
Zhen-cheng Wu, Taichung, TW;
Yen-Cheng Hu, New Taipei, TW;
Cheng-Chang Kuo, Taichung, TW;
Jun-Wei Chen, Kaohsiung, TW;
Hsin-Feng Li, Tainan, TW;
Jen-Chieh Chen, Miaoli County, TW;
Zhen-Cheng Wu, Taichung, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.