Hsien-Yi Liao

Title: Hsien-Yi Liao: Innovator in All-Oxide Transistor Technology

Introduction

Hsien-Yi Liao is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of all-oxide transistor structures. His innovative work has led to advancements in display panel technology.

Latest Patents

Hsien-Yi Liao holds a patent for an all-oxide transistor structure, which includes a method for fabricating the same and a display panel comprising the structure. This invention features a substrate with an upper surface and a first transistor positioned on it. The first transistor consists of a first drain, a first dielectric layer, a first source, at least one first opening, and a first channel layer. The design allows for efficient operation and integration into modern display technologies.

Career Highlights

Liao is affiliated with the Industrial Technology Research Institute, where he has been instrumental in advancing research and development in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Hsien-Yi Liao has collaborated with notable colleagues, including Haw-Tyng Huang and Po-Chun Yeh. These partnerships have fostered a collaborative environment that enhances innovation and research outcomes.

Conclusion

Hsien-Yi Liao's contributions to all-oxide transistor technology exemplify his commitment to innovation in the semiconductor industry. His work continues to influence the development of advanced display technologies.