Campbell, CA, United States of America

Hsien-Lung Yang

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsien-Lung Yang. Retrieved from https://idiyas.com/inventor/hsien-lung-yang-6lwl7sma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Innovative Inventor Hsien-Lung Yang Revolutionizing Semiconductor Manufacturing

Introduction: Hsien-Lung Yang, a talented inventor based in Campbell, CA, is making waves in the world of semiconductor manufacturing with his groundbreaking patent on sputter deposition and etching of metallization seed layers for overhang and sidewall improvement.

Latest Patents: Hsien-Lung Yang's remarkable patent involves an integrated sputtering method and reactor for copper or aluminum seed layers, addressing challenges in the formation of overhangs in high-aspect ratio holes. The method utilizes a unique sputter reactor design and plasma technology to achieve precise seed layer deposition and selective etching for optimal results.

Career Highlights: Currently affiliated with Applied Materials, Inc., Hsien-Lung Yang is contributing to cutting-edge developments in the semiconductor industry. His expertise in sputter deposition and etching techniques has positioned him as a key player in advancing manufacturing processes for integrated circuits.

Collaborations: In his innovative endeavors, Hsien-Lung Yang collaborates with esteemed colleagues such as Peijun Ding and Fuhong Zhang. Together, they form a dynamic team driving innovation and excellence in semiconductor technologies at Applied Materials, Inc.

Conclusion: Hsien-Lung Yang's inventive spirit and technical prowess are reshaping the landscape of semiconductor manufacturing. His patent reflects a deep understanding of materials science and process engineering, signaling a bright future for advancements in semiconductor technologies. With a strong foundation at Applied Materials, Inc. and a network of talented collaborators, Hsien-Lung Yang is poised to continue making significant contributions to the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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