Hseuh-Chung Chen

Title: Hseuh-Chung Chen: Innovator in Metal Interconnection Patterns

Introduction

Hseuh-Chung Chen is a notable inventor based in Cohoes, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of metal interconnection patterns.

Latest Patents

Hseuh-Chung Chen holds a patent for a method titled "Double patterning with selectively deposited spacer." This innovative process involves forming a first metal interconnection pattern over a substrate. A spacer layer is selectively deposited on the exposed surfaces of the first metal interconnection pattern. Subsequently, a metal overburden layer is deposited on the spacer layer. The excess portion of the metal overburden layer is then removed, specifically that portion deposited over the top surface of the metal interconnection pattern and the spacer layer. This process results in the formation of a second metal interconnection pattern, with the elements of the second pattern located between the respective elements of the first pattern.

Career Highlights

Hseuh-Chung Chen is currently employed at International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to explore and develop advanced technologies that enhance semiconductor manufacturing processes.

Collaborations

Throughout his career, Hseuh-Chung Chen has collaborated with esteemed colleagues, including Chanro Park and Koichi Motoyama. These collaborations have contributed to the advancement of innovative solutions in the semiconductor industry.

Conclusion

Hseuh-Chung Chen's contributions to the field of semiconductor technology, particularly through his patent on double patterning techniques, highlight his role as an influential inventor. His work continues to impact the industry positively.