This inventor holds 2 USPTO granted patents. Top assignees: Harris Corporation, Intersil Corporation. Active years: 1998-2000.
Company Filing History:
Years Active: 1998-2000
Title: The Innovations of Howard L. Evans
Introduction
Howard L. Evans is a notable inventor based in Palm Bay, FL (US). He has made significant contributions to the field of electronics, particularly in the development of EEPROM technology. With a total of 2 patents, Evans has demonstrated his expertise and innovative spirit in his work.
Latest Patents
One of Howard L. Evans' latest patents is focused on a radiation-hardened dielectric for EEPROM. This invention involves an EEPROM 140 that features a storage transistor 160 with a gate insulating layer 104 made of BPSG. The polysilicon gate 112.2 is of the same layer as the polysilicon gate 112.1 of the FET transistor 150. The BPSG layer 104 contains POHC traps that capture holes injected into N well 103.2. A positive voltage applied to N well 103.2 programs the storage transistor 160 off. Additionally, applying a positive voltage to the gate 112.2 neutralizes the holes stored in layer 104, effectively erasing the memory of transistor 160.
Career Highlights
Throughout his career, Howard L. Evans has worked with prominent companies such as Harris Corporation and Intersil Corporation. His experience in these organizations has contributed to his development as an inventor and innovator in the electronics industry.
Collaborations
Some of Howard L. Evans' notable coworkers include Robert T. Fuller and Michael J. Morrison. Their collaboration has likely fostered an environment of innovation and creativity in their respective projects.
Conclusion
Howard L. Evans is a distinguished inventor whose work in EEPROM technology has made a lasting impact in the field of electronics. His patents and collaborations reflect his commitment to innovation and excellence.