Xi'an, China

Housheng Li

This inventor holds 1 USPTO granted patent. Top assignees: Xi'an Eswin Material Technology Co., Ltd., Xi'an Eswin Silicon Wafer Technology Co., Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Housheng Li. Retrieved from https://idiyas.com/inventor/housheng-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Housheng Li: Innovator in Wafer Technology

Introduction

Housheng Li is a notable inventor based in Xi'an, China. He has made significant contributions to the field of wafer technology, particularly in the area of positioning methods for V-type notches.

Latest Patents

Housheng Li holds a patent for a "Method and system for positioning center of V-type notch of wafer, and computer storage medium." This innovative method involves determining the center of a concentric circle corresponding to the edges of a V-type notch based on collected edge data. It also includes assessing the position relation between the center and a reference scale line to determine if the notch is at a target center position. Furthermore, the method outlines how to adjust the wafer's rotation direction and angle when the notch is misaligned, ensuring precise positioning.

Career Highlights

Throughout his career, Housheng Li has worked with prominent companies such as Xi'an Eswin Material Technology Co., Ltd. and Xi'an Eswin Silicon Wafer Technology Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to advancements in wafer technology.

Collaborations

Housheng Li has collaborated with talented individuals in his field, including Leilei Wang and Xun Lan. These partnerships have fostered innovation and have been instrumental in the development of new technologies.

Conclusion

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Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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