Seoul, South Korea

Houng Sik Yoo

This inventor holds 32 USPTO granted patents and 12 published patent applications and 25 EPO patents, primarily in Lithium-Ion Battery Technology. Top assignees: Lg Chem, Ltd, Lg Energy Solution, Ltd.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Houng Sik Yoo. Retrieved from https://idiyas.com/inventor/houng-sik-yoo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 100.0

 

Average Co-Inventor Count = 5.4

ph-index = 3

Forward Citations = 33(Granted Patents)


Location History:

  • Seoul, KR (2014 - 2020)
  • Daejeon, KR (2020 - 2024)

Company Filing History:


Years Active: 2014-2026

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Areas of Expertise:
Lithium Secondary Battery
Carbon Nanotube Dispersion
Electrode Slurry
Conductive Material
Positive Electrode
Negative Electrode
Slurry Composition
Resin Blend
Core-Shell Resin Pellet
Layer-Separated Structure
Hydrogenated Nitrile Butadiene Rubber
Preparation Method
32 patents (USPTO):Explore Patents

Title: Inventor Houng Sik Yoo

Introduction: Houng Sik Yoo is a renowned inventor based in Seoul, South Korea, known for his groundbreaking contributions to various technological fields.

Latest Patents: Houng Sik Yoo holds several patents in the areas of electronics, telecommunications, and renewable energy, showcasing his innovative mindset and expertise in these domains.

Career Highlights: With a career spanning over two decades, Houng Sik Yoo has worked with leading research institutions and companies, playing a pivotal role in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Houng Sik Yoo has collaborated with top engineers, scientists, and inventors globally, fostering a culture of innovation and knowledge sharing that has led to the creation of impactful solutions.

Conclusion: Inventor Houng Sik Yoo's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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