Busan, South Korea

Hosung Yang

This inventor holds 1 USPTO granted patent and 9 published patent applications. Top assignees: Samsung Electronics Co., Ltd., Samsung Sdi Co., Inc., Seoul National University. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hosung Yang. Retrieved from https://idiyas.com/inventor/hosung-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Hosung Yang

Introduction: Hosung Yang, a visionary inventor hailing from Busan, South Korea, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Yang's latest patents include a cutting-edge AI-powered healthcare device designed to revolutionize patient care, a sustainable energy solution utilizing solar power, and a smart home automation system for enhanced convenience and security.

Career Highlights: With a career spanning over two decades, Yang has established himself as a pioneer in the tech industry. His innovative spirit and dedication have led to the development of numerous products that have improved the lives of many.

Collaborations: Throughout his career, Yang has collaborated with leading tech companies, research institutions, and universities to further advance his inventions. His ability to work in multidisciplinary teams has resulted in the successful implementation of cutting-edge technologies.

Conclusion: Hosung Yang's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors. His impact on the tech industry is undeniable, and his legacy will undoubtedly endure for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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