Hwaseong-si, South Korea

Hosun Jung


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Hosun Jung

Introduction

Hosun Jung is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology. His work has led to advancements that enhance the performance and efficiency of memory devices.

Latest Patents

Hosun Jung holds a patent for a semiconductor memory device. This device includes a substrate that comprises memory cell, peripheral, and intermediate regions. It features a device isolation pattern, a partitioning pattern, and bit lines that extend in a first direction to a boundary between the intermediate and peripheral regions. The design incorporates storage node contacts on the memory cell region, filling a lower portion of the space between bit lines. Additionally, landing pads are placed on the storage node contacts, along with dummy storage node contacts and dummy landing pads. A dam structure on the intermediate region extends in the first direction and has a bar shape, ensuring that the dummy landing pads are spaced apart from the edge of the dam structure in a second direction.

Career Highlights

Hosun Jung is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His role involves working on cutting-edge technologies that drive innovation in semiconductor devices. His expertise and contributions have been instrumental in the development of advanced memory solutions.

Collaborations

Throughout his career, Hosun Jung has collaborated with talented individuals such as Minwu Kim and Jungwoo Song. These collaborations have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Hosun Jung's innovative work in semiconductor memory devices exemplifies the impact of dedicated inventors in the technology sector. His contributions continue to shape the future of memory technology, making significant strides in enhancing device performance.

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