Hangzhou, China

Hongyao Shen

This inventor holds 1 USPTO granted patent. Top assignee: Zhejiang University. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongyao Shen. Retrieved from https://idiyas.com/inventor/hongyao-shen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Innovations in 3D Printing by Hongyao Shen

Introduction

Hongyao Shen is a notable inventor based in Hangzhou, China. He has made significant contributions to the field of 3D printing, showcasing his expertise through innovative methods and technologies. His work is particularly recognized for its practical applications in various industries.

Latest Patents

Hongyao Shen holds a patent for a novel 3D printing method. This method involves several steps, including importing a model into the printing area, utilizing a support unit arranged in an array, and traversing supporting divisions to determine the lowest points on the model. The process includes hierarchically slicing the model to create 2D contour lines and controlling the printer's operation to ensure precise printing. This innovative approach enhances the efficiency and accuracy of 3D printing processes.

Career Highlights

Hongyao Shen is affiliated with Zhejiang University, where he continues to advance his research and development in 3D printing technologies. His work has garnered attention for its potential to revolutionize manufacturing and design processes.

Collaborations

Hongyao Shen collaborates with esteemed colleagues, including Xiaoxiang Ye and Qingyu Li. Their combined expertise contributes to the advancement of innovative solutions in the field of 3D printing.

Conclusion

Hongyao Shen's contributions to 3D printing exemplify the impact of innovation in technology. His patent and ongoing research at Zhejiang University highlight the importance of continuous development in this dynamic field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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