Beijing, China

Hongxun Zhang

This inventor holds 1 USPTO granted patent. Top assignees: Boe Technology Group Co., Ltd., Hefei Boe Optoelectronics Technology Co., Ltd.. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongxun Zhang. Retrieved from https://idiyas.com/inventor/hongxun-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Hongxun Zhang: A Visionary Innovator Pushing Boundaries in Technology

Introduction:

Hongxun Zhang, a seasoned inventor based in Beijing, China, is recognized for his relentless pursuit of innovation and his passion for pushing the boundaries of what is possible in the world of technology and invention.

Latest Patents:

One of Zhang's notable patents is the "Over-temperature Protection Circuitry and Driving Method." This patent showcases an advanced circuitry design that includes a source circuit, comparator circuit, and output circuit, demonstrating Zhang's expertise in creating cutting-edge solutions for over-temperature protection.

Career Highlights:

Having accumulated an impressive portfolio of patents, Hongxun Zhang has made significant contributions to the field of technology. His innovative spirit and dedication to excellence have cemented his reputation as a true pioneer in the industry.

Collaborations:

Throughout his career, Zhang has collaborated with leading companies such as Boe Technology Group Co., Ltd. and Hefei Boe Optoelectronics Technology Co., Ltd. His partnerships with industry experts like Ran Jiang and Hai Kang have resulted in the successful development and implementation of groundbreaking technologies.

Conclusion:

Hongxun Zhang's unwavering commitment to innovation and his remarkable achievements in the realm of technology make him a standout figure in the inventor community. His pioneering work continues to inspire future generations of inventors to push the boundaries of what is possible and drive technological advancements forward.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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