Hongxiang Tang

Title: Innovations of Hongxiang Tang in Semiconductor Technology

Introduction

Hongxiang Tang is a notable inventor based in Jiangsu, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistor designs. His work has led to innovations that enhance the performance and cost-effectiveness of electronic devices.

Latest Patents

One of Hongxiang Tang's key patents is for a Trench Insulated Gate Bipolar Transistor (IGBT) and its manufacturing method. This invention provides a novel approach to creating IGBTs, which are essential components in power electronics. The manufacturing method includes several steps: preparing a semiconductor substrate, forming an epitaxial layer on one side, creating a gate and emitter on the opposite side, thinning the epitaxial layer to form a collector region, and finally metalizing the collector region. This method is notable for its low cost and the high performance of the resulting Trench IGBT.

Career Highlights

Hongxiang Tang is currently employed at Wuxi China Resources Huajing Microelectronics Co., Ltd. His role in the company allows him to apply his innovative ideas in a practical setting, contributing to the advancement of microelectronics. His expertise in IGBT technology has positioned him as a valuable asset in the semiconductor industry.

Collaborations

Throughout his career, Hongxiang Tang has collaborated with several professionals in the field, including Yongsheng Sun and Jianxin Ji. These collaborations have fostered an environment of innovation and have led to the successful development of new technologies.

Conclusion

Hongxiang Tang's contributions to semiconductor technology, particularly through his patent for the Trench Insulated Gate Bipolar Transistor, highlight his role as an influential inventor in the industry. His work continues to impact the field positively, paving the way for future advancements in electronics.