Qingdao, China

Hongxia Xu

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Chinese Academy of Sciences. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongxia Xu. Retrieved from https://idiyas.com/inventor/hongxia-xu-udm1mo6s

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hongxia Xu - Innovator in Polymer Electrolyte Technology

Introduction

Hongxia Xu is a prominent inventor based in Qingdao, China. She is affiliated with the Chinese Academy of Sciences, where she contributes to advancements in polymer electrolyte technology. Despite having no granted patents to her name, her research and patent applications reflect her innovative spirit and dedication to the field.

Latest Patent Applications

Hongxia Xu's notable patent application is titled "Polyoxymethylene-Based All-Solid-State Polymer Electrolyte Prepared by In-Situ Ring-Opening Polymerization and Application." This application describes a polyoxymethylene-based all-solid-state polymer electrolyte that is utilized in the formation of all-solid-state secondary lithium batteries. The process involves using a trioxymethylene monomer, an additive, and lithium salt to initiate in-situ ring-opening polymerization on a porous support material through a catalyst. The resulting all-solid-state polymer electrolyte has a thickness ranging from 10 μm to 800 μm, an ionic conductivity of 4×10⁻⁶ S/cm to 8×10⁻⁶ S/cm at room temperature, and an electrochemical window not lower than 4.2 V.

Conclusion

Hongxia Xu's contributions to polymer electrolyte technology highlight her innovative approach and commitment to advancing energy storage solutions. Her work at the Chinese Academy of Sciences continues to pave the way for future developments in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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