Sunnyvale, CA, United States of America

Hongtau Mu

This inventor holds 1 USPTO granted patent. Top assignee: Spansion LLC.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongtau Mu. Retrieved from https://idiyas.com/inventor/hongtau-mu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Innovations of Hongtau Mu

Introduction

Hongtau Mu is a notable inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of memory devices, particularly with his innovative designs that enhance performance and accuracy.

Latest Patents

Hongtau Mu holds a patent for a "Bitcell current sense device and method thereof." This memory device features a sense amplifier designed to sense the state of a bitcell. The sense amplifier includes two input terminals connected via a switch. One of the input terminals is linked to a node, where the current through the node indicates a difference in current drawn by a bitcell and a reference current. During the first phase, the switch is closed, applying a common voltage to both input terminals. In the second phase, the switch opens, allowing the sense amplifier to detect the state of information stored at the bitcell based on the current through the node. This method improves the accuracy and speed of determining the state of the information stored at the bitcell.

Career Highlights

Hongtau Mu is currently employed at Spansion LLC, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.

Collaborations

He has collaborated with notable colleagues, including Nian Niles Yang and Fan Wan Lai, contributing to various projects that push the boundaries of technology.

Conclusion

Hongtau Mu's contributions to memory device technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of more efficient memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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