Dresden, Germany

Hongsik Yoon

This inventor holds 1 USPTO granted patent. Top assignee: Globalfoundries Inc.. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongsik Yoon. Retrieved from https://idiyas.com/inventor/hongsik-yoon-3y9387yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Hongsik Yoon: Innovator in Semiconductor Technology

Introduction

Hongsik Yoon is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of innovative devices that enhance performance and reduce manufacturing costs.

Latest Patents

Hongsik Yoon holds a patent for "Semiconductor devices including self-aligned active regions for planar transistor architecture." This invention allows for the patterning of active regions in one lateral direction using a single lithography process. This method reduces process variability and overlay errors, leading to increased packing density and enhanced performance.

Career Highlights

Yoon's career is marked by his work at Globalfoundries Inc., where he has been instrumental in advancing semiconductor manufacturing techniques. His innovative approaches have contributed to the efficiency and effectiveness of semiconductor devices.

Collaborations

Hongsik Yoon has collaborated with notable colleagues, including Elliot John Smith and Nigel Chan. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Hongsik Yoon's contributions to semiconductor technology exemplify the impact of innovative thinking in the industry. His work continues to influence the development of advanced semiconductor devices, paving the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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