Seongnam, South Korea

Hongshin Jun

This inventor holds 1 USPTO granted patent. Top assignees: Skhynix Inc., Yonsei University. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongshin Jun. Retrieved from https://idiyas.com/inventor/hongshin-jun-0wi7jyxd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Hongshin Jun - Innovator in Memory Device Repair Technology

Introduction

Hongshin Jun is a notable inventor based in Seongnam, South Korea. He has made significant contributions to the field of memory device technology. His innovative approach to repairing memory devices has garnered attention in the tech community.

Latest Patents

Hongshin Jun holds a patent for a "Method and apparatus for repairing memory device." This patent outlines a method that includes collecting fail information on fail cells in a multi-block memory. It classifies the fail cells into first and second types and repairs them using various spare memory options based on the fail information. This innovative method enhances the reliability and efficiency of memory devices.

Career Highlights

Throughout his career, Hongshin Jun has worked with prominent organizations such as SK Hynix Inc. and Yonsei University. His experience in these institutions has allowed him to develop and refine his expertise in memory technology.

Collaborations

Hongshin Jun has collaborated with notable colleagues, including Sung Ho Kang and Joo Young Kim. Their combined efforts have contributed to advancements in the field of memory device repair.

Conclusion

Hongshin Jun's work in memory device technology exemplifies innovation and dedication. His patent and career achievements highlight his role as a key figure in advancing memory repair methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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