Yongin, South Korea

Hongrok Jang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Display Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongrok Jang. Retrieved from https://idiyas.com/inventor/hongrok-jang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hongrok Jang: Display Panel Heat-Treatment Innovation

Introduction

Hongrok Jang is an inventor based in Yongin, South Korea, and is associated with Samsung Display Co., Ltd. His patent work addresses heat treatment processes and equipment used in display panel manufacturing.

Latest Patents

Jang is credited with 1 patent: “Heat Treatment Device and Method of Manufacturing Display Panel Using the Same.” The invention describes a chamber that holds a work substrate containing a first organic layer and a heater that heats the substrate. Its air supply system uses a first nozzle to deliver external air and a second nozzle, positioned within the first, to supply process gas. A cover with an opening aligned with the second nozzle is placed near the first nozzle’s outlet, while an exhaust system removes particles from the chamber.

Career Highlights

Jang’s listed patent reflects work on equipment and methods intended for display panel production. The design combines controlled heating, process-gas delivery, and particle exhaust within a single heat-treatment device.

Collaborations

Jang’s listed coworkers include Minsu Kim and Dong-wook Song. The available information identifies his association with Samsung Display Co., Ltd., but does not specify the coworkers’ roles in the patent.

Conclusion

Hongrok Jang’s patent focuses on heat-treatment equipment for display panel manufacturing, integrating substrate heating, gas delivery, and particle removal in one system.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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