Hongming Shen

Title: Hongming Shen: An Inventor in Avalanche Photodiode Technology

Introduction

Hongming Shen is an inventor based in Shenzhen, China, and is associated with Huawei Technologies Co., Ltd. His patent work includes a design for an avalanche photodiode (APD) intended for use in detectors and laser radar systems.

Latest Patents

The provided information identifies one patent for Hongming Shen: “APD, APD Fabrication Method, Detector, and Laser Radar System.” The invention describes an APD with vertically arranged gain, gradient, and absorption layers. Its gain layer contains at least two stacked gain units, each comprising a multiplication layer and a charge layer. The design specifies that the charge layer is closer to the gradient layer than the multiplication layer is. The patent also describes the device’s electrodes, substrate, buffer, diffusion barrier, and contact layers. The reported patent count is 1 patent.

Career Highlights

Shen’s listed work connects semiconductor device design with optical detection and laser radar applications. The patent’s layered structure focuses on the configuration of the APD’s gain and absorption regions.

Collaborations

The provided information lists Yanli Zhao and Yun Ding as Shen’s coworkers. It does not specify their roles or the nature of their collaboration.

Conclusion

Hongming Shen’s listed patent concerns an avalanche photodiode architecture for detector and laser radar applications, reflecting his documented work in semiconductor and optical sensing technology.