Hongmei Li

Title: Innovations of Hongmei Li in Graphene Technology

Introduction

Hongmei Li is a prominent inventor based in Seneca, SC (US). She has made significant contributions to the field of graphene technology, particularly in the development of ion-sensitive field effect transistors. Her work has implications for various applications, including physiological monitoring.

Latest Patents

Hongmei Li holds a patent for a groundbreaking invention titled "Graphene field effect transistors for detection of ions." This invention features a graphene-based ion-sensitive field effect transistor (GISFET) that demonstrates high sensitivity and selectivity for ions. The GISFET has shown remarkable performance, particularly in detecting potassium ions, utilizing a valinomycin-based ion-selective membrane. The sensitivity of the GISFET is at least about 50 millivolts/decade and remains stable for approximately two months, showcasing its reliability and effectiveness in physiological monitoring.

Career Highlights

Throughout her career, Hongmei Li has worked with esteemed institutions such as the University of South Carolina and Clemson University. Her research has focused on advancing the capabilities of graphene technology, contributing to the scientific community's understanding of ion detection.

Collaborations

Some of her notable coworkers include Kenneth Walsh and Goutam Koley. Their collaborative efforts have further enhanced the research and development of innovative technologies in the field.

Conclusion

Hongmei Li's contributions to graphene technology, particularly through her patented GISFET, highlight her role as a leading inventor in the field. Her work not only advances scientific knowledge but also paves the way for practical applications in monitoring physiological conditions.