The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Mar. 18, 2019
University of South Carolina, Columbia, SC (US);
Clemson University, Clemson, SC (US);
Kenneth Walsh, Blythewood, SC (US);
Goutam Koley, Anderson, SC (US);
Md. Sayful Islam, Griffin, GA (US);
Hongmei Li, Seneca, SC (US);
University of South Carolina, Columbia, SC (US);
Clemson University, Clemson, SC (US);
Abstract
A graphene-based ion sensitive field effect transistor (GISFET) with high sensitivity and selectivity for ions is provided. For example, the GISFET of the present invention can exhibit high sensitivity and selectivity for Kions has been demonstrated utilizing a valinomycin-based ion selective membrane. The sensitivity of the GISFET can be at least about 50 millivolts/decade and can be stable for a time period of about two months, indicating the GISFET's reliability and effectiveness for physiological monitoring.