Company Filing History:
Years Active: 2024
Title: Innovations of Hongliang Lv in Semiconductor Packaging
Introduction: Hongliang Lv is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor devices, particularly in the area of packaging structures. His innovative work has led to the development of a unique package structure that enhances the performance and reliability of semiconductor devices.
Latest Patents: Hongliang Lv holds 1 patent for his invention titled "Package structure for semiconductor device and preparation method thereof." This patent discloses a package structure comprising a three-layer film, which includes a first SiO film, a SiN film, and a second SiO film stacked in that order. The first SiO film is formed through a thermal oxidation process, while the SiN film is created using a low-pressure chemical vapor deposition process. The second SiO film is formed by a low-temperature atomic layer deposition process. This innovative package structure aims to improve the efficiency and durability of semiconductor devices.
Career Highlights: Hongliang Lv is affiliated with Xidian University, where he continues to engage in research and development in semiconductor technology. His work has garnered attention for its practical applications in the electronics industry.
Collaborations: Hongliang Lv collaborates with notable colleagues, including Chen Liu and Yuming Zhang, who contribute to his research endeavors and enhance the scope of his projects.
Conclusion: Hongliang Lv's contributions to semiconductor packaging represent a significant advancement in the field. His innovative patent and ongoing research at Xidian University highlight his commitment to improving technology in the semiconductor industry.