The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Dec. 13, 2019
Applicant:
Xidian University, Xi'an, CN;
Inventors:
Assignee:
XIDIAN UNIVERSITY, Xi'an, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/06 (2006.01); C23C 8/10 (2006.01); C23C 8/80 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/48 (2006.01); H01L 21/52 (2006.01);
U.S. Cl.
CPC ...
H01L 23/06 (2013.01); C23C 8/10 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45525 (2013.01); H01L 21/02255 (2013.01); H01L 21/0228 (2013.01); H01L 21/481 (2013.01); H01L 21/52 (2013.01);
Abstract
This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiOfilm, a SiNfilm and a second SiOfilm stacked in this order, wherein the first SiOfilm is formed by a thermal oxidation process, the SiNfilm is formed by a low pressure chemical vapor deposition process, and the second SiOfilm is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.