Company Filing History:
Years Active: 2022-2025
Title: Innovations of Inventor Hongjian Li
Introduction
Hongjian Li is a prominent inventor based in Goleta, California. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on advanced methods for fabricating semiconductor devices, particularly those utilizing III-nitride materials.
Latest Patents
One of his latest patents is titled "Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth." This patent describes a method for creating semiconductor devices by forming a growth restrict mask on a III-nitride substrate. The process involves growing island-like III-nitride semiconductor layers that do not coalesce with neighboring layers, allowing for precise control over the device characteristics.
Another notable patent is "Method of removing a substrate with a cleaving technique." This invention outlines a technique for removing a substrate from III-nitride based semiconductor layers using a cleaving method. The process includes forming a growth restrict mask and bonding the semiconductor layers to a support substrate, which can be recycled after the layers are removed, leading to cost savings in device fabrication.
Career Highlights
Hongjian Li is affiliated with the University of California, where he continues to advance research in semiconductor technologies. His innovative approaches have garnered attention in the academic and industrial sectors, contributing to the development of more efficient semiconductor devices.
Collaborations
He has collaborated with notable colleagues such as Srinivas Gandrothula and Takeshi Kamikawa, further enhancing the impact of his research through teamwork and shared expertise.
Conclusion
Hongjian Li's contributions to semiconductor technology through his patents and research at the University of California highlight his role as a leading inventor in the field. His innovative methods are paving the way for advancements in device fabrication and efficiency.