Company Filing History:
Years Active: 2023-2024
Title: Innovations of Honggen Jiang in CVD Reactor Technology.
Introduction
Honggen Jiang is a notable inventor based in Cornwall, GB. He has made significant contributions to the field of chemical vapor deposition (CVD) technology. With a total of 2 patents, his work focuses on enhancing the efficiency and functionality of CVD reactors.
Latest Patents
Honggen Jiang's latest patents include a method for using a shield plate in a CVD reactor. This innovative design features a gas inlet member with a circular outline and a heated susceptor. The cooled ceiling panel of the gas inlet member contains outlet openings. The shield plate, which adjoins the ceiling panel, has a central zone and an annular zone. The rear side of the annular zone points toward the ceiling panel, while the flat gas outlet surface directs gas into the process chamber. The shield plate's material thickness ranges from 3 to 12 mm, and it is spaced apart from the ceiling plate by a gap of 0.3 to 1 mm.
Career Highlights
Honggen Jiang is currently employed at Aixtron SE, a company known for its advancements in CVD technology. His work has been instrumental in developing innovative solutions that improve reactor performance and efficiency.
Collaborations
Some of his notable coworkers include Adam Boyd and Wilhelm Josef Thomas Krücken. Their collaborative efforts contribute to the ongoing advancements in the field of CVD technology.
Conclusion
Honggen Jiang's contributions to CVD reactor technology demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of the complexities involved in chemical vapor deposition processes.