Baku, Azerbaijan

Hongfeng Jiang

This inventor holds 1 USPTO granted patent. Top assignee: Huawei Technologies Co., Limited. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongfeng Jiang. Retrieved from https://idiyas.com/inventor/hongfeng-jiang-5ae625vb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Hongfeng Jiang in Data Storage Technology.

Introduction

Hongfeng Jiang is a notable inventor based in Baku, Azerbaijan. He has made significant contributions to the field of data storage technology, particularly through his innovative methods for writing data to solid-state drives.

Latest Patents

One of his key patents is titled "Method for writing data to solid-state drive." This invention introduces both a byte-level write interface and a page-level write interface. Full-page input/output (I/O) data is efficiently written to a flash chip via the page-level interface, while smaller I/O data is directed to a storage class memory (SCM) chip through the byte-level interface. This dual approach enhances the performance and efficiency of data writing processes.

Career Highlights

Hongfeng Jiang is currently employed at Huawei Technologies Co., Limited, a leading global provider of information and communications technology (ICT) infrastructure and smart devices. His work at Huawei has allowed him to be at the forefront of technological advancements in data storage solutions.

Collaborations

He collaborates with talented professionals in his field, including his coworker Zhen Cheng, to further innovate and refine data storage technologies.

Conclusion

Hongfeng Jiang's contributions to data storage technology, particularly through his patented methods, highlight his role as a significant inventor in the industry. His work continues to influence advancements in solid-state drive technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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