Pasadena, CA, United States of America

HongChao Zhou

This inventor holds 1 USPTO granted patent. Top assignees: California Institute of Technology, Texas A&M University System. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: HongChao Zhou. Retrieved from https://idiyas.com/inventor/hongchao-zhou-8gl63xta

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Innovations of HongChao Zhou in Memory Device Technology

Introduction

HongChao Zhou is a notable inventor based in Pasadena, CA, who has made significant contributions to the field of memory device technology. His innovative approach to information representation and coding for nonvolatile memories has led to advancements that enhance data storage capabilities.

Latest Patents

HongChao Zhou holds a patent for "Information representation and coding for nonvolatile memories." This patent describes a memory device that consists of multiple cells, each storing a value. The values are mapped to discrete levels that represent data. The programming of these cells is managed by an adaptive programming system, which determines the maximum number of cell levels based on the values attained by the cells in response to applied voltage. This technique allows for an increased number of cell levels and data values that can be programmed into the memory device, surpassing conventional methods.

Career Highlights

Throughout his career, HongChao Zhou has worked with prestigious institutions, including the Texas A&M University System and the California Institute of Technology. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

HongChao Zhou has collaborated with notable colleagues such as Bruck Jehoshua and Anxiao Jiang. Their combined efforts have furthered research and development in the field of memory devices.

Conclusion

HongChao Zhou's contributions to memory device technology exemplify the impact of innovative thinking in advancing data storage solutions. His patent and career achievements highlight the importance of research and collaboration in driving technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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