Beijing, China

Hongbing Xie

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2022

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Hongbing Xie in Subsurface Fracture Modeling

Introduction

Hongbing Xie is a notable inventor based in Beijing, China. He has made significant contributions to the field of subsurface modeling, particularly in the calibration of complex fracture networks. His work is essential for understanding subterranean regions with intricate geological formations.

Latest Patents

Hongbing Xie holds a patent titled "Systems and methods for calibration of indeterministic subsurface discrete fracture network models." This patent focuses on techniques for calibrating simulations of subterranean regions that exhibit complex fracture geometries. The calibration process utilizes non-intrusive embedded discrete fracture modeling formulations, which are applied alongside well testing interpretation and numerical simulation. This innovative approach allows for the dynamic characterization of subterranean fracture networks, enabling the accurate and efficient determination of optimal fracture models.

Career Highlights

Hongbing Xie is associated with Sim Tech LLC, where he applies his expertise in subsurface modeling. His work has been instrumental in advancing the understanding of fracture networks, which are critical for various applications in geosciences and engineering.

Collaborations

Hongbing collaborates with esteemed colleagues, including Jijun Mlao and Wei Yu. Their combined efforts contribute to the development of advanced methodologies in subsurface modeling.

Conclusion

Hongbing Xie's innovative work in subsurface fracture modeling represents a significant advancement in the field. His contributions are vital for improving the accuracy of geological simulations and enhancing our understanding of complex subterranean environments.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…