Seongnam, South Korea

Hong Sik Byun

This inventor holds 3 USPTO granted patents. Top assignee: Jusung Engineering Co., Ltd.. Active years: 2003-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hong Sik Byun. Retrieved from https://idiyas.com/inventor/hong-sik-byun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.7

ph-index = 2

Forward Citations = 339(Granted Patents)


Location History:

  • Songnam-shi, KR (2003 - 2004)
  • Kyunggi-do, KR (2004)

Company Filing History:


Years Active: 2003-2004

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3 patents (USPTO):Explore Patents

Title: Innovations of Hong Sik Byun

Introduction

Hong Sik Byun is a notable inventor based in Songnam-shi, South Korea. He has made significant contributions to the field of plasma generation and thin film deposition, holding a total of three patents. His work is primarily associated with Jusung Engineering Co., Ltd., a company known for its advancements in semiconductor manufacturing technology.

Latest Patents

One of Byun's latest patents is an apparatus for generating inductively coupled plasma (ICP). This innovative apparatus features a heater with a hot wire as a heating source, which efficiently transfers heat to the elements within the chamber and its inner wall. The design allows for heating up to approximately 200°C, which helps reduce the adhesion of by-products that can generate undesirable particles. Additionally, the use of a hot wire, which has a longer lifespan than traditional halogen lamps, enhances the durability of the apparatus.

Another significant patent is the wafer susceptor, which includes a ceramic body, an RF electrode, and a heater. The RF electrode is strategically mounted within the ceramic body, spaced apart from the heater to minimize RF noise interference. This design enables high-density thin film deposition while maintaining control over the film's properties, such as stress and step coverage. The invention also contributes to the stabilization of the power system.

Career Highlights

Throughout his career, Hong Sik Byun has demonstrated a commitment to innovation in the semiconductor industry. His patents reflect a deep understanding of the technical challenges faced in plasma generation and thin film deposition processes. Byun's work has not only advanced the technology but has also contributed to the efficiency and effectiveness of semiconductor manufacturing.

Collaborations

Byun has collaborated with several talented individuals in his field, including Gi Chung Kwon and Sung Weon Lee. These collaborations have likely fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies.

Conclusion

Hong Sik Byun is a distinguished inventor whose contributions to the field of plasma generation and thin film deposition have made a significant impact. His innovative patents and collaborations reflect his dedication to advancing technology in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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