This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2004.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2004
Title: Hong-mi Park: Semiconductor Process Inventor
Introduction
Hong-mi Park is an inventor based in Yongin, South Korea, associated with Samsung Electronics Co., Ltd. His patent work addresses methods for forming conductive films and patterns used in semiconductor devices.
Latest Patents
Park is credited with 1 patent: “Method for Forming a Conductive Film and a Conductive Pattern of a Semiconductor Device.” The invention describes nitrifying a semiconductor substrate bearing a tungsten film with a partially oxidized surface, then oxidizing the surface to convert the tungsten nitride layer into tungsten oxy-nitride. The oxy-nitride layer and reaction residues are subsequently removed to leave a tungsten film. The process is intended to improve residue removal, reduce film resistance, and help prevent failures associated with reacted residues.
Career Highlights
Park’s listed patent reflects work on semiconductor fabrication, particularly the formation and treatment of tungsten films. The disclosed method focuses on controlling surface reactions and removing unwanted material during conductive-film processing.
Collaborations
Park’s listed coworkers include Ju-Cheol Shin and In-Sun Park. His patent is associated with Samsung Electronics Co., Ltd.
Conclusion
Hong-mi Park’s patent describes a semiconductor manufacturing process designed to produce cleaner, lower-resistance tungsten films and reduce residue-related failures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile