Company Filing History:
Years Active: 2000-2003
Title: Innovations of Hong-Cheng Sung in Flash Memory Technology
Introduction
Hong-Cheng Sung is a notable inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of flash memory technology, particularly through his innovative methods for improving erase speeds in split-gate flash memory cells. With a total of 2 patents, his work has garnered attention in the semiconductor industry.
Latest Patents
One of Hong-Cheng Sung's latest patents is titled "Method of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flash." This patent describes a method for creating a short and sharp gate bird's beak, which enhances the erase speed of split-gate flash memory. The first embodiment involves implanting fluorine in the first polysilicon layer to form the floating gate. The introduction of fluorine increases the oxidation rate of the polysilicon, resulting in a relatively short and sharp polygate bird's beak compared to conventional designs. This innovation leads to smaller memory cells and improved erase speeds. The second embodiment utilizes oxygen with similar beneficial outcomes. Additionally, a third embodiment presents the structure of a split-gate flash memory cell featuring a sharp bird's beak.
Career Highlights
Hong-Cheng Sung is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to focus on advancing flash memory technologies and contributing to the development of more efficient memory cells.
Collaborations
He has collaborated with notable coworkers, including Chia-Ta Hsieh and Yai-Fen Lin, who have also contributed to advancements in semiconductor technologies.
Conclusion
Hong-Cheng Sung's innovative methods in flash memory technology demonstrate his expertise and commitment to enhancing memory cell performance. His contributions are vital to the ongoing evolution of semiconductor technology.