Company Filing History:
1 out of 832,891 Years Active: 2001
Title: Innovations of Hong-Chen Yu
Introduction
Hong-Chen Yu is a notable inventor based in Yi-Lan Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication processes of polysilicon gates. His innovative approach has led to the development of a unique patent that enhances the efficiency and effectiveness of semiconductor manufacturing.
Latest Patents
Hong-Chen Yu holds a patent for a "Fabricating process for polysilicon gate." This patent describes a fabrication process in which a silicon dioxide layer of various thicknesses is formed on the substrate and on the polysilicon gate, accompanied by an overlying anti-reflection layer. The process involves the removal of the silicon dioxide layer while ensuring that enough remains to cover the sidewalls of the polysilicon gate and the silicon substrate. This method simultaneously protects the sidewalls of the polysilicon gate and the silicon substrate during the removal of the anti-reflection layer, showcasing an innovative approach to semiconductor fabrication.
Career Highlights
Throughout his career, Hong-Chen Yu has demonstrated a commitment to advancing semiconductor technology. His work has not only contributed to the field but has also paved the way for further innovations in the industry. His patent reflects his expertise and dedication to improving fabrication processes.
Collaborations
Hong-Chen Yu has collaborated with notable colleagues, including Hsi-Mao Hsiao and Hsi-Chin Lin. These collaborations have likely contributed to the development of his innovative ideas and patents.
Conclusion
Hong-Chen Yu is a distinguished inventor whose work in semiconductor fabrication has led to significant advancements in the industry. His patent for the polysilicon gate fabrication process exemplifies his innovative spirit and dedication to improving technology.