Other

Hong-Chen Yu

Chun-Lung Chen

Hsi-Mao Hsiao

Hsi-Chin Lin

A fabrication process for a polysilicon gate is described in which a silicon dioxide layer of various thicknesses is formed on the substrate and on the polysilicon gate with an overlying anti-reflection layer. The silicon dioxide layer is removed with enough silicon dioxide layer remaining to cover the sidewalls of the polysilicon gate and the silicon substrate before the removal of the anti-reflection layer. The sidewalls of the polysilicon gate and the silicon substrate are thus simultaneously protected during the removal of the anti-reflection layer.

Growing community of inventors

Yi-Lan Hsien, Taiwan

Hong-Chen Yu