Singapore, Singapore

Hon-Wu Lau

This inventor holds 2 USPTO granted patents. Top assignee: Cabot Microelectronics Corporation. Active years: 2016-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hon-Wu Lau. Retrieved from https://idiyas.com/inventor/hon-wu-lau-3u7318il

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 1


Company Filing History:


Years Active: 2016-2019

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2 patents (USPTO):Explore Patents

Title: Hon-Wu Lau: Innovator in Chemical Mechanical Polishing

Introduction

Hon-Wu Lau is a distinguished inventor based in Singapore, known for his contributions to the field of chemical mechanical polishing (CMP). With a total of two patents to his name, Lau has made significant advancements in polishing compositions and methods that enhance the performance of various substrates.

Latest Patents

Lau's latest patents include innovative CMP compositions and methods for polishing nickel phosphorous surfaces. One patent describes a CMP method that involves abrading a nickel phosphorus (NiP) substrate with a composition containing colloidal silica abrasive suspended in an aqueous carrier with a pH of less than 2. This composition includes hydrogen peroxide as a primary oxidizing agent, along with a secondary oxidizing agent that comprises a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide. Additionally, a chelating agent with two or three carboxylic acid substituents is included to enhance the effectiveness of the polishing process.

Another notable patent focuses on a composition and method for polishing memory hard disks while reducing edge roll-off. This invention provides a CMP composition that contains various abrasives, an oxidation catalyst, a non-transition metal sulfate salt, a complexing agent, hydrogen peroxide, and surfactants. The polishing composition is designed to operate at a pH of about 1 to about 5 and is substantially free of peroxydisulfate

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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