Homer K Cheung

Title: The Innovative Contributions of Homer K. Cheung

Introduction

Homer K. Cheung is a notable inventor based in Dallas, TX, who has made significant contributions to the field of semiconductor technology. His work has led to advancements that enhance the performance and efficiency of semiconductor devices. With a focus on innovative methods, Cheung has secured a patent that showcases his expertise and creativity in this domain.

Latest Patents

Homer K. Cheung holds a patent for an invention titled "Ion implant of the moat encroachment region of a LOCOS field isolation." This patent describes a method of forming a semiconductor device, which includes several intricate steps. The process involves providing a silicon substrate of predetermined conductivity type, implanting impurities, and oxidizing the substrate to create a bird's beak region. This region is characterized by a higher level of impurity directly beneath it, enhancing the overall functionality of the semiconductor device.

Career Highlights

Cheung is currently associated with Texas Instruments Corporation, a leading company in the semiconductor industry. His role at Texas Instruments has allowed him to work on cutting-edge technologies and contribute to the development of innovative semiconductor solutions. His patent reflects his commitment to advancing the field and improving device performance.

Collaborations

Throughout his career, Homer K. Cheung has collaborated with talented individuals such as Emily A. Groves and Wayne Edward Bailey. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Homer K. Cheung's contributions to semiconductor technology through his patent and work at Texas Instruments Corporation highlight his role as an influential inventor. His innovative methods continue to shape the future of semiconductor devices, demonstrating the importance of creativity and collaboration in technological advancements.