Okemos, MI, United States of America

Homayoon Maghsoodi

This inventor holds 2 USPTO granted patents. Top assignees: Massachusetts Institute of Technology, University of Michigan. Active years: 2018-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Homayoon Maghsoodi. Retrieved from https://idiyas.com/inventor/homayoon-maghsoodi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2018-2020

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2 patents (USPTO):Explore Patents

Title: Homayoon Maghsoodi: Innovator in Particle Deposition Technology

Introduction

Homayoon Maghsoodi is a notable inventor based in Okemos, MI (US). He has made significant contributions to the field of particle deposition technology. With a total of 2 patents, his work has garnered attention in both academic and industrial circles.

Latest Patents

Maghsoodi's latest patents include innovative methods for the discrete deposition of particles. His work focuses on the ability to discretely eject a particle from an orifice, which has potential applications in various industries.

Career Highlights

Throughout his career, Maghsoodi has worked with prestigious institutions such as the Massachusetts Institute of Technology and the University of Michigan. His experience in these renowned organizations has helped him refine his research and development skills.

Collaborations

Some of his notable coworkers include Justin Douglas Beroz and Anastasios John Hart. Their collaborative efforts have contributed to advancements in the field of particle technology.

Conclusion

Homayoon Maghsoodi's innovative work in particle deposition technology highlights his role as a significant contributor to the field. His patents and collaborations reflect his commitment to advancing scientific knowledge and practical applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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