Hwaseong, South Korea

Hoi Sik Moon

This inventor holds 22 USPTO granted patents and 3 published patent applications, primarily in Display Technology. Top assignees: Samsung Display Co., Ltd., Samsung Displayco., Ltd.. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hoi Sik Moon. Retrieved from https://idiyas.com/inventor/hoi-sik-moon-4k3dclsz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 95.5

Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 13(Granted Patents)


Location History:

  • Asan-si, KR (2014 - 2021)
  • Yongin-si, KR (2021)
  • Hwaseong-si, KR (2020 - 2023)

Company Filing History:


Years Active: 2014-2023

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Areas of Expertise:
Display Apparatus
Image Processing
Correction Data
Driving Method
Liquid Crystal Display
Variable Frame Mode
Quality Compensation
Vision Inspection
Luminance Distortion
Sub-Pixel Electrodes
Display System
Controller
22 patents (USPTO):Explore Patents

Title: Inventor Hoi Sik Moon

Introduction: Hoi Sik Moon is a renowned inventor hailing from Hwaseong-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hoi Sik Moon holds several patents in the areas of electronics, telecommunications, and renewable energy, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Hoi Sik Moon has worked with leading tech companies in South Korea, spearheading research and development projects that have led to significant technological advancements.

Collaborations: Throughout his career, Hoi Sik Moon has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Hoi Sik Moon's passion for innovation and his relentless pursuit of technological excellence continue to inspire the next generation of inventors and researchers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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