Munich, Germany

Hofmann Franz


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2016

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: Innovations of Hofmann Franz in Memory Technology

Introduction

Hofmann Franz is a notable inventor based in Munich, Germany. He has made significant contributions to the field of memory technology, particularly through his innovative designs and patents. His work focuses on enhancing the efficiency and performance of memory cells.

Latest Patents

Hofmann holds a patent for a "Sense amplifier with dual gate precharge and decode transistors." This invention relates to a sense amplifier that is crucial for sensing and amplifying data stored in a memory cell. The sense amplifier connects between a bit line and a reference bit line, featuring a sense circuit capable of providing an output indicative of the data stored in the memory cell. Additionally, it includes a precharge and decode circuit that utilizes a pair of dual gate transistors for precharging the bit lines during a precharge operation and for transferring the output to a data line during a read operation. He has 1 patent to his name.

Career Highlights

Hofmann is currently employed at Soitec, a company known for its advancements in semiconductor materials and technologies. His role involves developing innovative solutions that enhance memory performance and efficiency.

Collaborations

Hofmann collaborates with talented professionals in his field, including Richard Ferrant and Joerg Vollrath. Their combined expertise contributes to the success of their projects and innovations.

Conclusion

Hofmann Franz is a distinguished inventor whose work in memory technology has led to significant advancements. His patent on the sense amplifier showcases his commitment to innovation and excellence in the field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…