Busan, South Korea

Hoeyong Kim

This inventor holds 1 USPTO granted patent. Top assignee: Lg Display Co., Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hoeyong Kim. Retrieved from https://idiyas.com/inventor/hoeyong-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2016

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Hoeyong Kim: Innovator in Display Technology

Introduction

Hoeyong Kim is a notable inventor based in Busan, South Korea. He has made significant contributions to the field of display technology, particularly through his innovative patent.

Latest Patents

Hoeyong Kim holds a patent for a "Display device and method for manufacturing the same." This invention includes a substrate with a display area and a non-display area. The non-display area comprises a gate metal line positioned on the substrate, a gate insulating layer insulating the gate metal layer, a data metal line positioned on the gate insulating layer, and two or more protective layers positioned in a region where the gate metal line and the data metal line overlap above the data metal line. He has 1 patent to his name.

Career Highlights

Hoeyong Kim is currently employed at LG Display Co., Ltd., a leading company in the display technology sector. His work has contributed to advancements in display devices, enhancing their functionality and manufacturing processes.

Collaborations

He has collaborated with notable coworkers, including HwaDong Han and Hyunsoo Jang, to further innovate in the field of display technology.

Conclusion

Hoeyong Kim's contributions to display technology through his patent and work at LG Display Co., Ltd. highlight his role as an influential inventor in the industry. His innovative spirit continues to drive advancements in display devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…