Company Filing History:
Years Active: 2000
Title: Ho-Sung Liao: Innovator in Copper Oxide Removal Technology
Introduction
Ho-Sung Liao is a notable inventor based in Yun-Lin Hsien, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of copper oxide removal. His innovative approach addresses a common challenge faced in the industry, enhancing the efficiency of electronic components.
Latest Patents
Ho-Sung Liao holds a patent for a method of removing copper oxide within a via hole. This method involves forming a copper layer, followed by a dielectric layer. A via hole is then created to penetrate through the dielectric layer, exposing a portion of the copper layer. The exposed copper reacts with oxygen in the air, forming a copper oxide layer. To effectively remove this layer, he utilizes 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, showcasing a novel solution to a prevalent issue in semiconductor fabrication.
Career Highlights
Ho-Sung Liao is currently employed at United Silicon Incorporated, where he continues to develop innovative solutions in semiconductor technology. His work has been instrumental in advancing the efficiency and reliability of electronic devices.
Collaborations
He collaborates with talented colleagues, including Shih-Ming Lan and Hsien-Liang Meng, contributing to a dynamic and innovative work environment.
Conclusion
Ho-Sung Liao's contributions to the field of semiconductor manufacturing, particularly through his patented method for copper oxide removal, highlight his role as an influential inventor. His work not only addresses critical challenges in the industry but also paves the way for future innovations.