Seoul, South Korea

Ho Geun Han

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Sk Enpulse Co., Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ho Geun Han. Retrieved from https://idiyas.com/inventor/ho-geun-han

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Ho Geun Han: Innovator in Semiconductor Technology

Introduction

Ho Geun Han is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device fabrication apparatus.

Latest Patents

Ho Geun Han holds 1 patent for his invention related to semiconductor device fabrication. The patent describes an upper electrode that includes a flat upper surface and a lower surface facing the upper surface. The lower surface features a first profile with a specific thickness change rate, as well as additional profiles surrounding it, each with defined thickness change rates. This intricate design aims to enhance the efficiency and performance of semiconductor devices.

Career Highlights

Ho Geun Han is currently employed at Sk Enpulse Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work is characterized by a commitment to innovation and excellence in engineering.

Collaborations

He collaborates with talented coworkers, including Jong Kyu Lee and Hyun Soo Lee, who contribute to the advancement of their projects and research initiatives.

Conclusion

Ho Geun Han's contributions to semiconductor technology exemplify the spirit of innovation. His patent and ongoing work at Sk Enpulse Co., Ltd. highlight his dedication to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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