Aichi, Japan

Hitoshi Ohsato

This inventor holds 1 USPTO granted patent. Top assignees: Marusu Glaze Co., Ltd., Yasufuku Ceramics Co., Ltd.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hitoshi Ohsato. Retrieved from https://idiyas.com/inventor/hitoshi-ohsato-5dzrfxq2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2008

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Hitoshi Ohsato: Inventor of High-Frequency Ceramic Technology

Introduction

Hitoshi Ohsato is an inventor associated with Aichi, Japan. His work includes a patent for a high-frequency porcelain composition designed to improve ceramic performance while enabling lower-temperature sintering. He is credited with 1 patent.

Latest Patents

Ohsato’s patent, “High-Frequency Porcelain Composition, Process for Producing the Same and Planar High-Frequency Circuit,” describes adding 15% to 35% by weight of rutile-type titanium dioxide to forsterite. This addition allows the composition to be sintered at 1,200°C while retaining the crystal phases of both materials.

The resulting ceramic composition preserves the high quality factor Q·f associated with forsterite, while rutile-type titanium dioxide helps control the absolute temperature coefficient to 30 ppm/°C or less. These properties make the composition relevant to high-frequency ceramic applications and planar circuits.

Career Highlights

Ohsato’s listed company affiliations include Yasufuku Ceramics Co., Ltd. and Marusu Glaze Co., Ltd. His patent reflects work on ceramic materials and processing methods for high-frequency applications.

Collaborations

Ohsato’s listed coworkers include Tsutomu Tsunooka and Tomonori Sugiyama.

Conclusion

Hitoshi Ohsato’s patented composition combines forsterite and rutile-type titanium dioxide to support lower-temperature sintering while maintaining useful high-frequency properties.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…