Company Filing History:
Years Active: 1991
Title: Hitoshi Ogata: Innovator in Semiconductor Technology
Introduction
Hitoshi Ogata is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.
Latest Patents
Hitoshi Ogata holds a patent for a semiconductor light-emitting device that includes a hole barrier contiguous to an active layer. This device features a hole barrier layer that is formed in contact with the first surface of the active layer, providing a barrier against holes while allowing electrons to tunnel through. Additionally, a low energy band gap layer is formed on the barrier layer, ensuring that the conduction band minimum is lower than that of the active layer. The design includes first and second electrodes in ohmic contact with n-type and p-type conductivity layers, enhancing the device's functionality. This innovative approach allows for high-speed capabilities in laser applications.
Career Highlights
Hitoshi Ogata is associated with the Optoelectronics Technology Research Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the understanding and application of light-emitting devices in various industries.
Collaborations
Hitoshi Ogata has collaborated with Yoshinori Nomura, contributing to the development of cutting-edge technologies in the field of optoelectronics. Their partnership has fostered innovation and has led to advancements in semiconductor devices.
Conclusion
Hitoshi Ogata's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a leading inventor in the field. His work continues to influence the development of efficient light-emitting devices, showcasing the importance of innovation in technology.