Hitoshi Matsuzaki

Title: Hitoshi Matsuzaki: Innovator in Semiconductor Technology

Introduction

Hitoshi Matsuzaki is a notable inventor based in Mito, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work has been instrumental in advancing the capabilities of electronic devices.

Latest Patents

Matsuzaki's latest patents include a "High-side switch with overcurrent protecting circuit." This innovative switching circuit features a detection circuit that identifies the current flowing through a main P-channel MOSFET. It also includes a reference-voltage generating circuit that produces a constant reference voltage, independent of variations in power supply potential. Additionally, a comparator circuit operates on a floating supply voltage to compare the detected voltage with the reference voltage, converting it into a logic voltage signal. Another significant patent is for a "Semiconductor device," which comprises a heavily doped semiconductor layer exposed to both principal surfaces of a semiconductor substrate. This device includes various semiconductor elements, such as diodes and MOS transistors, enhancing the functionality and efficiency of electronic components.

Career Highlights

Throughout his career, Hitoshi Matsuzaki has worked with prominent companies, including Hitachi, Ltd. and Hitachi Haramachi Semiconductor, Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Matsuzaki has collaborated with notable colleagues, including Koichi Suda and Masayuki Wada. These partnerships have contributed to the successful development of his patents and innovations.

Conclusion

Hitoshi Matsuzaki's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.