The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 1990
Filed:
May. 31, 1989
Hitoshi Matsuzaki, Mito, JP;
Kiyoshi Tukuda, Hitachi, JP;
Toshikatsu Shirasawa, Hitachiota, JP;
Hideki Miyazaki, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device comprises a heavily doped semiconductor layer exposed to both principal surfaces of a semiconductor substrate, a semiconductor element such as a diode, a bipolar transistor, and a MOS transistor, etc. formed on one principal surface side of the semiconductor substrate, a resistor region connected in series with the semiconductor element on the other principal surface side of the semiconductor substrate, and an electrode for current detection kept in contact with the semiconductor layer on the one principal surface side.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile