Hitoshi Matsumoto

Title: Hitoshi Matsumoto: Innovator in Carbon Nanostructures and Thin Film Transistors

Introduction

Hitoshi Matsumoto is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the fields of materials science and electronics, particularly through his innovative work with carbon nanostructures. With a total of 2 patents, Matsumoto's inventions are paving the way for advancements in technology.

Latest Patents

Matsumoto's latest patents include a "Porous Member and Catalyst Member" and a "Thin Film Transistor and Method for Producing Same." The porous member consists of a base member with a porosity of over 80% and carbon nanostructures formed on its surface, which have a width of less than or equal to 100 nm. The catalyst member features a catalyst arranged on the surfaces of these carbon nanostructures. His thin film transistor is designed with a silicon substrate, a channel layer, and both source and drain electrodes. The channel layer is composed of multiple carbon nanowall thin films arranged in parallel, enhancing the device's efficiency.

Career Highlights

Throughout his career, Hitoshi Matsumoto has worked with notable organizations such as Sumitomo Electric Industries, Limited and Chubu University Educational Foundation. His experience in these institutions has allowed him to refine his expertise in the development of advanced materials and electronic components.

Collaborations

Matsumoto has collaborated with talented individuals in his field, including Risa Utsunomiya and Teruaki Matsuba. These partnerships have contributed to the success of his innovative projects and have fostered a collaborative environment for research and development.

Conclusion

Hitoshi Matsumoto's work in carbon nanostructures and thin film transistors exemplifies the spirit of innovation. His patents reflect a commitment to advancing technology and improving electronic devices. His contributions will undoubtedly influence future developments in the field.