Tokyo, Japan

Hitoshi Ishiro

USPTO Granted Patents = 1 

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Hitoshi Ishiro: Innovator in Vapor Deposition Technology

Introduction

Hitoshi Ishiro is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of vapor deposition technology. His innovative work has led to the development of advanced methods and devices that enhance the production of organic semiconductor elements.

Latest Patents

Hitoshi Ishiro holds a patent for a vapor deposition mask, which includes a metal mask with a metal mask opening and a resin mask with a corresponding resin mask opening. This design allows for precise pattern formation during the vapor deposition process. The patent also details a method for producing organic semiconductor elements, emphasizing the importance of maintaining an arithmetic average height (Sa) of the resin mask surface exposed from the metal mask opening to not exceed 0.8 μm. This innovation is crucial for improving the quality and efficiency of semiconductor manufacturing.

Career Highlights

Ishiro is currently employed at Dai Nippon Printing Co., Ltd., where he continues to push the boundaries of technology in his field. His work has been instrumental in advancing vapor deposition techniques, which are essential for various applications in electronics and materials science.

Collaborations

Hitoshi Ishiro has collaborated with notable colleagues, including Yasuko Sone and Hiroshi Kawasaki. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Hitoshi Ishiro's contributions to vapor deposition technology exemplify the impact of innovative thinking in the field of semiconductor manufacturing. His patent and ongoing work at Dai Nippon Printing Co., Ltd. highlight his role as a key figure in advancing this critical technology.

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