Company Filing History:
Years Active: 2005-2011
Title: Hitoshi Asada: Innovator in Semiconductor Technology
Introduction
Hitoshi Asada is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.
Latest Patents
Asada's latest patents include a semiconductor device and a method for fabricating the same. The semiconductor device is designed to suppress variation and a drop in the breakdown voltage of transistors. It features a logic transistor and a high-breakdown-voltage transistor formed on a single silicon substrate. An insulating film with a two-layer structure is utilized to prevent impurities from passing through during ion implantation, ensuring precise formation of high concentration drain regions. Additionally, his method for fabricating a semiconductor device with high withstand voltage transistors includes a gate electrode, source and drain regions, and silicide layers that mitigate electric field concentration, thus ensuring high withstand voltages.
Career Highlights
Hitoshi Asada has worked with notable companies such as Fujitsu Corporation and Fujitsu Semiconductor Limited. His experience in these organizations has allowed him to develop innovative solutions in semiconductor technology.
Collaborations
Asada has collaborated with esteemed colleagues, including Hiroaki Inoue and Kiyoshi Miyazawa. Their joint efforts have contributed to advancements in the semiconductor field.
Conclusion
Hitoshi Asada's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively.