Guiza, Egypt

Hisham Emad El-Din ElShishiny

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisham Emad El-Din ElShishiny. Retrieved from https://idiyas.com/inventor/hisham-emad-el-din-elshishiny

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Hisham Emad El-Din ElShishiny: Innovator in 3D Modeling Technology

Introduction

Hisham Emad El-Din ElShishiny is a notable inventor based in Guiza, Egypt. He has made significant contributions to the field of 3D modeling technology. His innovative approach to solving complex problems in digital imaging has led to the development of a unique patent.

Latest Patents

Hisham holds a patent for a "System and method for hole filling in 3D models." This method involves identifying vertices adjacent to hole boundaries in a mesh of points on a digital image. It constructs a signed distance function based on these vertices and fits a Radial Basis Function to evaluate the hole. The process includes extracting points on the hole surface and meshing them to effectively fill the hole.

Career Highlights

Hisham is currently employed at International Business Machines Corporation, commonly known as IBM. His work at IBM allows him to collaborate with leading experts in the field and contribute to cutting-edge technology.

Collaborations

Hisham has worked alongside notable colleagues such as Fausto Bernardini and Holly Edith Rushmeier. Their combined expertise enhances the innovative projects they undertake.

Conclusion

Hisham Emad El-Din ElShishiny is a pioneering inventor whose work in 3D modeling technology exemplifies innovation in the digital imaging sector. His contributions continue to influence advancements in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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