Osaka, Japan

Hisashi Yonemoto

USPTO Granted Patents = 3 

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 5(Granted Patents)


Location History:

  • Fukuyama, JP (2010)
  • Osaka, JP (2012 - 2013)

Company Filing History:


Years Active: 2010-2013

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3 patents (USPTO):Explore Patents

Title: The Innovations of Hisashi Yonemoto: A Pioneer in Semiconductor Technology

Introduction

Hisashi Yonemoto, an accomplished inventor based in Osaka, Japan, has made significant contributions to the field of semiconductor technology. With three patented inventions, his work has revolutionized methods for manufacturing semiconductor devices, particularly in the formation of element isolation films essential for high-voltage transistors.

Latest Patents

Among Hisashi Yonemoto's latest patents is a groundbreaking semiconductor device manufacturing method. This innovative process outlines a formation method of an element isolation film aimed at creating high-voltage transistors with superior characteristics. The method involves several key steps, including the initial formation of a gate oxide film on a substrate, followed by the application of a CMP (Chemical Mechanical Planarization) stopper film. Subsequent etching processes are carried out on both the gate oxide film and the CMP stopper film. The semiconductor substrate is then etched to create a trench. Before filling the trench with a field insulating film, a liner insulating film is strategically formed on the trench's interior wall. This meticulous approach also addresses concerns of void formation in the element isolation film that is laterally positioned with respect to the gate oxide film, ensuring enhanced reliability and performance of the resulting high-voltage transistors.

Career Highlights

Hisashi Yonemoto has dedicated a significant portion of his career to the innovative pursuits within the semiconductor industry. His affiliation with Sharp Corporation, widely recognized for its technological advancements, has provided him with a robust platform to develop and patent his groundbreaking inventions. His tireless efforts continue to influence modern semiconductor manufacturing techniques.

Collaborations

In his journey of innovation, Hisashi has collaborated with notable colleagues, including Masayuki Tajiri and Takayoshi Hashimoto. These partnerships have fostered a creative environment that has been instrumental in pushing the boundaries of semiconductor technology and contributing to various successful projects.

Conclusion

Hisashi Yonemoto stands out as a distinguished inventor whose work in semiconductor technology is characterized by precision and innovation. With three patents to his name, he continues to lead advancements in the field, contributing to the ongoing evolution of electronic devices. His collaborative spirit and deep commitment to research signify a bright future for semiconductor advancements, inspiring future generations of inventors and engineers.

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