Tokyo, Japan

Hisako Sato


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 70(Granted Patents)


Company Filing History:

goldMedal1 out of 832,880 
Other
 patents

Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Hisako Sato in Semiconductor Technology

Introduction

Hisako Sato, an accomplished inventor based in Tokyo, Japan, has made significant strides in the field of semiconductor technology. With a focus on enhancing manufacturing methods, Sato is dedicated to improving the efficiency and effectiveness of semiconductor devices. Her inventive spirit has resulted in one noteworthy patent that showcases her expertise and innovation in this complex field.

Latest Patents

Hisako Sato holds a patent for a "Method of manufacturing an improved SOI (silicon-on-insulator)." This patent outlines a novel approach to fabricating semiconductor devices. In this method, a first semiconductor substrate is prepared with a first insulating film over its main surface, followed by the formation of a semiconductor film of n-type conductivity and a second insulating film. The method intricately details the bonding process between the second insulating film and a third insulating film on a second semiconductor substrate, involving thermal processing for enhanced integration. Sato's approach ensures that the insulating films serve critical functions within the device, thereby optimizing the performance of an MISFET (metal-insulator-semiconductor field-effect transistor).

Career Highlights

Throughout her career, Hisako Sato has been recognized for her contributions to semiconductor technology. Her singular patent exemplifies her innovative thinking and commitment to advancing the industry. Sato's dedication to research and development has not only contributed to technical advancements but has also paved the way for future innovations in semiconductor fabrication.

Collaborations

In her professional journey, Sato has collaborated with notable colleagues such as Hiroo Masuda and Takahide Nakamura. These partnerships have fostered a creative environment for problem-solving and innovation, allowing for the exchange of ideas that enhance their collective work in semiconductor technology.

Conclusion

Hisako Sato's contributions to the field of semiconductor technology through her patent for an improved SOI manufacturing method reflect her skill and dedication as an inventor. With valuable collaborations and a focus on innovation, Sato continues to influence the landscape of semiconductor devices, showcasing the impact of her work in a rapidly evolving industry.

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